Guāngfú diànchí-shēngchǎn guāngfú diànchí zuì chángyòng de bàndǎotǐ shì nǎ zhǒng? Dāngqián, měinián yǒu 90%yǐshàng de guāngfú diànchí shì guī guāngfú diànchí, yīncǐ, guī shì shēngchǎn guāngfú diànchí zuì chángyòng de bàndǎotǐ. Guī shì yī zhǒng huàxué yuánsù, huàxué fúhào shì Si, yuánzǐ xùshù shì 14, xiāngduì yuánzǐ zhìliàng shì 28.0855. Guī shì yī zhǒng bàndǎotǐ, tā yǒu wú dìngxíng hé jīngtǐ liǎng zhǒng, shǔyú yuánsù zhōuqí biǎo shàng ⅣA zú, yě jiùshì tàn zú yuánsù. Guī de yīngwén shì silicon, láizì lādīng wén de silex,sili-cis, yìsi wèi suìshí (huǒshí). Guī nài gāowēn, nài fúshè xìngnéng jiào hǎo, kěkào xìng gāo, yīncǐ tèbié shìyí zhìzuò dà gōnglǜ qìjiàn. Mùqián, bùjǐn jǐn dàduō shǔ de guāngfú diànchí shì yòng guī cáiliào zhìzào de, jíchéng diànlù bàndǎotǐ qìjiàn de dà duōshù yěshì yòng guī cáiliào zhìzào de. Guī shì zuì róngyì zhìzào de bàndǎotǐ cáiliào, zài bàndǎotǐ cáiliào zhōng, dān jīng guī de zhíjìng zuìdà. Mùqián, shēngchǎn zhíjìng 12in●de dān jīng guī bàng yǐ shì chéngshú jìshù, érqiě shēngchǎn 18in de dān jīng guī bàng yě yǐjīng bùshì shénme nántíle. Ér shēn huà jiā dān jīng de zuìdà zhíjìng jǐn wèi 6in. Guī jīngtǐ de wánzhěng xìng zuì hǎo. Zài chéng dìng de bàndǎotǐ cáiliào fāngmiàn, dān jīng guī de jīngtǐ wánzhěng xìng zuì hǎo, xiànzài yǐjīng kěyǐ shēngchǎn chū wú wèi cuò dān jīng. Dào mùqián wéizhǐ, yòng qítā bàndǎotǐ cáiliào shēngzhǎng wú wèi cuò dān jīng hái méiyǒu chénggōng de lìzi. Zài bàndǎotǐ cáiliào zhōng, guī bàndǎotǐ cáiliào de shēngchǎn chéngběn zuìdī. Yóuyú guī cáiliào de dútè xìngzhì, shǐ tā chéngwéi xiàndài diànzǐ gōngyè hé xìnxī shèhuì de jīchǔ, qí fāzhǎn shì 20 shìjì cáiliào hé diànzǐ lǐngyù de lǐchéngbēi, tā de fǎ zhǎn hé yìngyòng zhíjiē cùjìnle 20 shìjì quánqiú kējì hé gōngyè de gāosù fāzhǎn, yīn'ér, rénlèi de fǎ zhǎn bèi chēng wéi jìnrùle “guī shídài”. Guī de zīyuán fēngfù, zài zìránjiè fēnbù jí guǎng, tā shì gòuchéng kuàngwù yǔ yánshí de zhǔyào yuánsù, shì dìqiào zhōng zuìduō de yuánsù zhī yī, jǐn cì yú yǎng, zài dì ké zhōng de fēng dù dá 27.72%Zuǒyòu. Dàn dà duō shì yǐ huàhéwù xíngshì cúnzài, qízhōng yǐ èr yǎnghuà guī hé guī suān yán xíngshì cúnzài de wèi zuìduō, tiānrán de dānzhì guī hái cónglái méiyǒu fāxiànguò. Dàshān de shí kuài, hǎibiān de shā shí, fángwū de zhuān wǎ, lóufáng de lóubǎn, chuānghù de bōlí děng de zhǔyào chéngfèn dōu shì guī, jiù lián wǒmen de shēntǐ lǐ yě hányǒu wéiliàng de guī. Gōngyè zhōng shǐyòng de guī, tōngcháng shì cǎiyòng zài diànlú lǐ yóu tàn huányuán èr yǎnghuà guī de fāngfǎ huòdé de. Guī chéng yín huīsè, jùyǒu jīnshǔ guāngzé, xìng cuì yì suì, bùyì tíchún, yǒu bàndǎotǐ xìngzhì. Guī de róngdiǎn shì 1420℃; fèidiǎn shì 2600℃. Tōngcháng guī shì yǐ sì jià zhuàngtài cānyù fǎnyìng, zài huàhéwù zhòng chéng yīnlízǐ zhuàngtài. Zài xǔduō huàhéwù zhòng, guī dì xìngnéng yǔ tàn hěn xiāngsì. Guī yì yǔ lǔsù huàhé, shēngchéng SiX4 xíng huàhéwù, zài hóng rè wēndù xià yǔ yǎng fǎnyìng, zài 600℃yǔ liú fǎnyìng, zài 1000℃yǔ dàn fǎnyìng. Guī yì róngjiě yú róngróng de měi (Mg), tóng (Cu), tiě (Fe) jí niè (Ni) zhōng, xíngchéng guīhuà wù. Guī zài yètài huò qìtài de qīng fú suān (HF) zhōng yǐjí wáng shuǐ (HNO3:HC1=1:3) Zhōng jūn kě róngjiě, dàn bù yǔ rènhé nóngdù de liúsuān, xiāosuān hé yánsuān fāshēng fǎnyìng. Zài hóng rè zhuàngtài xià, guī yǔ shuǐqì huǎnmàn zuòyòng bìng shìfàng chū qīng (H2). Guī cáiliào jùyǒu tèshū de wùlǐ huàxué xìngnéng hé liánghǎo de bàndǎotǐ xìngzhì. Guī rónghuà shí tǐjī suōxiǎo, gùhuà shí tǐjī zēng dà, zhè yī xìngzhì yǔ shuǐ jīběn xiàng tóng. Guī cáiliào de yìngdù gāo, cuìxìng dà, jùyǒu liánghǎo de bàndǎotǐ xìngzhì, qí běn zhēng zài liú zǐ nóngdù wèi 1.5×1010 Gè/cm3, běn zhēng diànzǔ lǜ wèi 1.5×1010☊∙Cm, diànzǐ qiānyí lǜ wèi 1350cm2/(V∙s), kōng xué qiānyí lǜ wèi 480cm2/(V∙s). Guī de jìn dàikuān (1.1EV), lòu diànliú xiǎo. Suízhe 1947 nián fāmíng shuāng jí xíng jīngtǐguǎn, kāishǐ chūxiànle gùtài diànzǐ qìjiàn. Yī kāishǐ yòng yú zhìzào èrjíguǎn hé sānjíguǎn de bàndǎotǐ cáiliào shì zhě (Ge), rán'ér, yóuyú zhě de jìn dài zhǎi xiǎo (0.66EV), yǐnqǐ PN jié fǎn xiàng shí xù zhōng yǒu xiāngdāng dà de lòu diànliú. Zhè yīdiǎn xiànzhìle zhě qìjiàn zhǐ néng zài dī yú 100℃shí cáinéng gōngzuò. Cǐwài, jíchéng diànlù píngmiàn chǔlǐ xūyào néng zài bàndǎotǐ biǎomiàn shàng shēngchéng yī céng dùn huà céng. Yǎnghuà zhě néng zuòwéi dùn huà céng, dàn nányǐ shēngchéng, érqiě qí róng yú shuǐ, zài 800℃shífēnjiě. Zhèxiē xiànzhì shǐ xù zài zuòwéi zhìzào jíchéng diànlù de cáiliào fāngmiàn, yǔ guī bǐ qǐlái xiāngxíngjiànchù. Guī de jìn dài gèng kuān (1.1EV), lòu diànliú xiǎo, yīncǐ kěyǐ shēngchǎn chū zuìgāo gōngzuò wēndù dá 150℃zuǒyòu de guī qìjiàn. Cǐwài, guī de yǎnghuà wù SiO2 yìyú shēngchéng, érqiě huàxué xìngzhì shí fēn wěndìng. Yuèdú gèng duō: Shēngchǎn guāngfú diànchí de zhǔyào cáiliào yǒu nǎxiē? 展开 1,526 / 5,000 翻译结果 Photovoltaic cells - Which semiconductors are most commonly used in the production of photovoltaic cells?

Photovoltaic cells – Which semiconductors are most commonly used in the production of photovoltaic cells?

Currently, more than 90% of photovoltaic cells each year are silicon photovoltaic cells, therefore, silicon is the most commonly used semiconductor for the production of photovoltaic cells.
Silicon is a chemical element, the chemical symbol is Si, the atomic number is 14, and the relative atomic mass is 28.0855. Silicon is a kind of semiconductor, it has two kinds of amorphous and crystalline, it belongs to the IVA group on the periodic table, that is, the carbon group element. The English name of silicon is silicon, which comes from the Latin silex, sili-cis, which means flint (flint).

Silicon has good high temperature resistance, radiation resistance and high reliability, so it is especially suitable for making high-power devices. At present, not only most photovoltaic cells are made of silicon material, but most of integrated circuit semiconductor devices are also made of silicon material. Silicon is the easiest semiconductor material to manufacture, and among the semiconductor materials, single crystal silicon has the largest diameter. At present, the production of single crystal silicon rods with a diameter of 12in ● is a mature technology, and the production of 18in single crystal silicon rods is no longer a problem. The maximum diameter of arsenide single crystal is only 6in.

Silicon crystals have the best integrity. In ingot semiconductor materials, single crystal silicon has the best crystal integrity, and it is now possible to produce dislocation-free single crystals. So far, there have been no successful examples of growing dislocation-free single crystals from other semiconductor materials. Among semiconductor materials, silicon semiconductor materials have the lowest production cost.

Due to the unique properties of silicon material, it has become the foundation of modern electronic industry and information society. Its development is a milestone in the field of materials and electronics in the 20th century. Its development and application directly promoted the rapid development of global technology and industry in the 20th century. , the development of human beings is said to have entered the “Silicon Age”.

silicon
silicon

Silicon is rich in resources and widely distributed in nature. It is the main element that constitutes minerals and rocks. It is one of the most abundant elements in the earth’s crust, second only to oxygen. Its abundance in the earth’s crust is about 27.72%. But most of them exist in the form of compounds, of which the most exist in the form of silica and silicate, and natural elemental silicon has never been found. The main components of the rocks in the mountains, the sand and gravel on the beach, the bricks and tiles of the houses, the floors of the buildings, the glass of the windows, etc. are all silicon, and even our bodies contain trace amounts of silicon.

Silicon used in industry is usually obtained by reducing silica with carbon in an electric furnace. Silicon is silver-gray, with metallic luster, brittle and brittle, not easy to purify, and has semiconductor properties. The melting point of silicon is 1420°C; the boiling point is 2600°C. Usually silicon participates in the reaction in a tetravalent state and is in an anionic state in the compound. Silicon behaves much like carbon in many compounds. Silicon is easy to combine with halogen to form SiX4 type compound, which reacts with oxygen at red-hot temperature, reacts with sulfur at 600℃, and reacts with nitrogen at 1000℃. Silicon is easily dissolved in molten magnesium (Mg), copper (Cu), iron (Fe) and nickel (Ni) to form silicides. Silicon is soluble in liquid or gaseous hydrofluoric acid (HF) and in aqua regia (HNO3:HC1=1:3), but does not react with any concentration of sulfuric acid, nitric acid and hydrochloric acid. In the red-hot state, silicon slowly interacts with water vapor and releases hydrogen (H2).

Silicon material has special physical and chemical properties and good semiconductor properties. Silicon shrinks in volume when it melts and increases in volume when it solidifies, which is basically the same property as water. Silicon has high hardness, high brittleness, and good semiconductor properties. Its intrinsic carrier concentration is 1.5×1010/cm3, its intrinsic resistivity is 1.5×1010☊∙cm, and its electron mobility is 1350cm2/(V ∙s), and the hole mobility is 480 cm2/(V∙s).

The forbidden bandwidth of silicon (1.1eV), the leakage current is small. Solid-state electronics began to appear with the invention of the bipolar transistor in 1947. The semiconductor material used to make diodes and triodes at the beginning was germanium (Ge). However, due to the narrow band gap (0.66eV) of germanium, there is a considerable leakage current in the reverse phase of the PN junction. This limits germanium devices to work only below 100°C. In addition, integrated circuit planarization requires the ability to create a passivation layer on the semiconductor surface. Germanium oxide can be used as a passivation layer, but it is difficult to form, and it is soluble in water and decomposes at 800 °C. These limitations dwarf that of silicon as a material for making integrated circuits. Silicon has a wider band gap (1.1eV) and less leakage current, so silicon devices with a maximum operating temperature of around 150°C can be produced. In addition, silicon oxide SiO2 is easy to generate, and its chemical properties are very stable.

Read more: What are the main materials used to produce photovoltaic cells?

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